Need help translating Japanese to English

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By dhau

Paragon (1570)

dhau's picture

02-06-2008, 09:50

Hi, can someone please translate XDJ512.DOC and S1985.DOC from XDJ512.LZH archive?

It is probably the schematic on how to get 512K of RAM on Sony MSX2 HB-F1 XDJ computer...

Thanks a lot in advance to any kind soul who can help :)

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By Buhi

Rookie (20)

Buhi's picture

02-06-2008, 22:17

Maybe sоmebоdy can translate at

By Jipe

Paragon (1549)

Jipe's picture

03-06-2008, 00:42

good help : Yahoo babelfish !!

 Memory as for the person who thinks of that it increases please refer in the substance of .MSX2/2+ which collected the technical information which is necessary to the case where memory is increased in MSX2/2+ which loads S1985.  Furthermore, the inquiry to the manufacturer modesty concerning this case. 1995.5.2 Fujimoto 昌 interest (NIFTY-ID: MCN00585) - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - - S1985 (MSX-SYSTEMII)  S1985, with LSI which was developed in one for MSX2, by the fact that it constitutes with LSI of Z80CPU and V9938, can actualize MSX2 with the little part. With the favor of S1985, very cheap MSX2 appeared in comparison with early MSX2. 1. Functional summary Slot as for control slot 0, slot 3 simultaneously open-ended The control of DRAM (lead/read, light/write and refreshment) Mapper function is possible to 512KB MSX2 real time clock built-in of standard VDP selection signal Control of keyboard Control of printer (bidirectional mode correspondence of printer) Kanji ROM selection signal SSG (PSG) built-in CMOS (100 pin plastic flat packages)

3. Memory, slot control-related signal Terminal terminal name Input-output capability

3 MA18/KBDIR out [matsupaadoresu] or keyboard bus direction
4 MA17 out [matsupaadoresu]
5 MA16 out [matsupaadoresu]
6 MA15 out [matsupaadoresu]
7 MA14 out [matsupaadoresu

*28 ~RSEL   in When expanding the slot, NAND logic of [ato] ゙ less AB8~AB13 The signal which you take input (the [hu] ゚ [ruatsuhu] ゚ resistance attaching)

39 ~RAS out The RAS signal of DRAM
41 MPX out Multiplex signal of DRAM address
42 ~CAS out The CAS signal of DRAM
43 ~WE out The WE signal of DRAM
44 ~CS1 out ROM selection 4000H~7FFFH signal
45 ~CS2 out ROM selection 8000H~BFFFH signal
46 ~CS12 out ROM selection 4000H~BFFFH signal
47 ~SLT0/00 out The selection signal of SLOT#0 or SLOT#00
48 ~SLT01 out The selection signal of SLOT#01
49 ~SLT02/~CS0 out Selection of SLOT#02 or ROM selection 0000H~3FFFH signal
50 ~SLT03/~CS01 out Selection of SLOT#03 or ROMselection 0000H~7FFFH signal
51 ~SLT1 out The selection signal of SLOT#1
52 ~SLT2 out The selection signal of SLOT#2
53 ~SLT3/30 out The selection signal of SLOT#3 orSLOT#30
54 ~SLT31 out The selection signal of SLOT#31
55 ~SLT32 out The selection signal of SLOT#32
56 ~SLT33 out The selection signal of SLOT#33
73 ~X0 in Keyboard return signal
74 ~X1 in Keyboard return signal
75 ~X2 in Keyboard return signal
76 ~X3 in Keyboard return signal
77 ~X4 in Keyboard return signal
78 ~X5 in Keyboard return signal
79 ~X6 in Keyboard return signal
80 ~X7 in Keyboard return signal

4. Selection of function
S1985 when resetting latching the keyboard return signal, selecting function It does. The function which is selected is as follows. When you look at actually MSX2/2+, using the diode, wiring and programming.
Terminal name [rehe] ã‚™ [ru] function
~X2 L DRAM [rihuretsushiyumoto] ã‚™ becomes RAS only refreshment mode.
H DRAM [rihuretsushiyumoto] ã‚™ becomes [hidonrihuretsushiyumodo].
~X5 L The MA18/KBDIR terminal outputs the MA18 signal.
H The MA18/KBDIR terminal outputs the KBDIR signal.
~X6 L Keyboard kana JIS arrangement
H Keyboard kana 50 sound arrangement
~X7 L VDP [rito] 1WAIT is required at the time of ã‚™/the light/write.
H VDP [rito] 1WAIT is not required at the time of ã‚™/the light/write.
~X3 L ~SLT03/~CS01, the ~SLT02/~CS0 terminal ~SLT03,outputs the ~SLT02 signal.
H ~SLT03/~CS01, the ~SLT02/~CS0 terminal ~CS01,outputs the ~CS0 signal.
~X1 L The slot 0 is expanded.
H If it is ~X3=1, the slot 0 is not expanded.

* About the MA18/KBDIR terminal   
In order mapper function to 512KB to make possible, MA18 is necessary. For this when resetting in order in ~X5 to become [rehe] ã‚™ [ru] L, it is necessary to wire to program.


The 512KB memory addition of MSX2/2+ itself which

As for the .1MB expansion storage cartridge which is

Fujimoto of the writer of the 1MB expansion storage

cartridge, without remodelling the substance it is to

produce in order to increase the memory of MSX2 but,

when the DOS2 cartridge and the other cartridge are

used, there are times when it cannot designate

memory addition as because the slot is already used.

 It tried thinking of that it builds in increases the

mapper memory of 512KB in MSX2/2+ itself which

uses S1985 then. As for S1985, by the fact that the

pseudo static ram of .512KB which builds in the

mapper register which can be managed is used, 3 with

just IC does memory addition to 512KB. This time, it

introduces concerning the remodelling example in the

case of SONY HB-F1XDJ. You think that even with in

case of the other type it becomes reference. 1.
Use part
HM658512 ×1 512KB pseudo static ram  
74HC02   ×1 NOR gate IC  
74HC32   ×1 OR gate IC  
1S1588×1 Switching diode
0.1μF ×1 Ceramic condenser
10KΩ   ×1 1/8W resistance
Wire AWG28 for [waiyaratsupingu] (0.32mm)

2. Schematic  

No. No.|   
Z80 +5V 11------------------32|Vcc
Z80 GND 29------------------16|GND
Z80 D0 14------------------13|D0
Z80 D1 15------------------14|D1
Z80 D2 12------------------15|D2
Z80 D3 8------------------17|D3
Z80 D4 7------------------18|D4
Z80 D5 9------------------19|D5
Z80 D6 10------------------20|D6
Z80 D7 13------------------21|D7
Z80 A0 30------------------12|A0
Z80 A1 31------------------11|A1
Z80 A2 32------------------10|A2
Z80 A3 33------------------ 9|A3
Z80 A4 34------------------ 8|A4
Z80 A5 35------------------ 7|A5
Z80 A6 36------------------ 6|A6
Z80 A7 37------------------ 5|A7
Z80 A8 38------------------27|A8
Z80 A9 39------------------26|A9
Z80 A10 40------------------23|A10
Z80 A11 1------------------25|A11
Z80 A12 2------------------ 4|A12
Z80 A13 3------------------28|A13
S1985 MA14 7------------------ 3|A14
S1985 MA15 6------------------31|A15
S1985 MA16 5------------------ 2|A16

S1985 MA17 4------------------30|A17
S1985 MA18/KBDIR 3------------------ 1|A18
Z80 ~WR 22------------------29|~WE
| +---24|~OE/~RFSH
| | |
| |  ̄ ̄ ̄ ̄ ̄ ̄
| +--------------+
+--------------+ |
_ | |
S1985 ~SLT30 53--+----------------o| | | |
| |32)o-+ |
| _ +-o| | |
+-o| | | ï¿£ |
|02)-+ _ | |
Z80 ~RD 21----o| | +-| | | _ |
ï¿£ )32)-|--| | |
_ +-| | | )02)o-----+
Z80 ~RFSH 28----o| | | ï¿£ +--| |
|02)-+ | ï¿£
Z80 ~MERQ 19----o| | |
ï¿£ |
_ |
Z80 ~BUSACK 23----o| | |
+-o| |
| ï¿£

  In case of HB-F1XD, it means that the baseplate is

different more or less but, the basic point is the same.

The point where it is different is about to use ~SLT33

as a signal of the memory slot. The pin numbering of

~SLT33 of S1985 is 56. 3. Explanation in schematic

The latest memory addition, in order to handle the

address of .512KB which uses the 512KB pseudo

static ram, has used MA14~MA18 of A0~A13 and S

1985 of Z80.   As for the pseudo static ram, as for

each function of the package and the pin, it is identical

excluding usual SRAM and part. But, the memory

circuit inside is to be DRAM. In other words if you see

on the side which is used, it is method of using which

is not different from SRAM so should have been done

but, above being DRAM, the refreshment becomes

necessary. Though the refreshment is very simple in

comparison with DRAM.  

The operation of HM658512
~CE ~OE/~RFSH ~WE Operation
L L H Read
L X L Write
H L X Refresh
H H X Standby

The refreshment, when Z80 is ~RFSH=L AND

~MERQ=L, the signal of HM658512 has gone by the

fact that it makes ~OE/~RFSH=L and ~CE=H. This

time, as for pseudo static ram,  

 It is operational with automatic refreshment mode.

With this mode, using the refreshment counter inside,

you refresh the pseudo static ram.   By the way, in

HB-F1XDJ, as for .PAUSE which is PAUSE and the

speed controller, making use of ~BUSREQ and

~BUSACK of Z80, the operation of Z80 one The time

it seems that is made to stop. Because of this,

~MERQ and ~RFSH of Z80 use this period It is not

possible.   It is measure at the time of PAUSE state,

but, this time Z80 utilizes the fact that ~BUSACK=L is

output. At the time of ~BUSACK=L, the signal of HM

658512 .ç–‘ä¼¼ sram which it tries to make ~OE/

~RFSH=L and ~CE=H, when the period of ~OE/

~RFSH=L and ~CE=H is above 8μS, becomes self

refreshment mode. With this mode, using the

refreshment counter and the timer inside, you refresh

the pseudo static ram, automatically

Supplementation) PAUSE, ~BUSREQ of Z80, using

the ~BUSACK terminal, stopping the operation of Z80

at one time, it actualizes the speed controller. Unless

measure of the refreshment of this period is taken, the

data orientation wound of DRAM it occurs.   Similar

problem occurs even with the 1MB expansion storage

cartridge which I design.  But, although PAUSE state

is supported, because the effective signal has not

come out of the slot, being able to correspond to

PAUSE it is not. Also the other memory cartridge is

similar With you think, (also RAM of the DOS2

cartridge was useless) .1MB expansion storage When

using the cartridge, way PAUSE and [supikon] are not

used, the request stripe M (which it does) the m.DOS2

cartridge (RAM to be attached), also MEM768 is

similar. RAM which is built in to XDJ the fact that it is all

right even in PAUSE state, during PAUSE period

giving the ~MERQ signal and refresh address from the

custom tip/chip, seems like because it does the

refreshment of DRAM.

The disassembly procedure of 4.HB-F1XDJ  It

disassembles with procedure below. It will classify the

screw which you remove, the classified by group.

Because the assembly does with the procedure of

opposite to disassembly, please remember the thing

when disassembling.   Substance screw 6 it is on

reverse side is removed   You remove above the

substance. This time, wiring of [supikon] and running

fire in substance baseplate with connector   Because

3 places it is connected, this is removed   The

keyboard is removed. Because the film condition

cable is used, as for treatment politely   The sealed

cover which is on the baseplate of the substance is

removed   Power source section the connector and

the battery connector are removed from the baseplate.

  The power source connector of FDD and the

connector of 34P are removed.   The screw which

has stopped FDD unit is removed, (3 places)   In the

radiator (aluminum plate) you have stopped three

terminal regulator which is on the left side of the

baseplate    The screw of the leaf spring is removed

(1 places). You have stopped radiator (aluminum

plate) in the baseplate    The screw is removed (2

places).   The screw (black) which has stopped [

riasurotsuto] is removed, (2 places)   The screw (

black) which has stopped the RCA pin of VIDEO and

AUDIO output is removed, (1 places)   The screw

which has stopped the baseplate is removed, (5

places)   2 floor building has stopped the screw (

black) which the baseplate is removed, (1 places) You

can remove the sealed board and the baseplate at

above. It will handle the baseplate which you remove

carefully.  Looking at the baseplate of HB-F1XDJ, you

tried collecting the fact that it is understood.   The

baseplate is both sides, but, as for pattern of the

component side most unused.   The solder side it

wires at 2 layer.   S1985 was mounted on reverse

side of the baseplate.

  MA14~MA18/KBDIR had become the unused pin.

   -> From the place where the memory mapper of

64KB is effective, as for the mapper control of DRAM

It is not S1985, you think as the thing which is built in

on custom tip side.   [kibodoritan] as for the signal

when resetting ~X5 reaches H level.   -> The diode

addition is needed in order to make MA18 effective.  

Same as the diode which is connected to ~X1, ~X3

and ~X6 resistant array and the Q1 transistor      If

it adds the diode to the collector, OK.   Note)    As

for the baseplate of HB-F1XDJ for decreasing cost

the lead/read which is wired in the baseplate    

Processing of the line is very careless. The part which

does not have the coating of the lead wire having

exposed, unskillfulness    If it does, 6~7 place there

was a part of a kind of state where it short-circuits.

Checking    You think that the one which does again

to solder is better. The remodelling 5.HB-F1XDJ
(1) the memory IC which is mounted on the substance

originally is removed. μPD41464 (or the suitable item)

is mounted 2. Solder with soldering iron   It inhales

with the melting, the solder dropper, or the solder

sucking/absorbing taking line, please take. Through

hole Because so it is not, you think that you can

remove IC relatively simply.
(2) adding the diode in order to make MA18 effective

Is because with the MA18/KBDIR signal of S1985

MA18 that tries becomes effective.    When resetting

in order for ~X5 of S1985 to reach L level, it wires.

~X5 being connected same as the diode which is

connected to ~X1, ~X3 and ~X6 of S1985 Between

the collectors of the terminal and the Q1 transistor of

the resistant array which is the 1S1588 diode If it

solders, it is OK. Also diode direction is the same

direction. Way you do not make a mistake,   Please


(3) wiring   HM658512 is mounted between Z80 and

S1985 in regard to circumstances of wiring and

reverse side of the baseplate densely With it did. Like

this, when it does, it can wire directly from the terminal

of Z80 and the terminal of S1985 It does, also wiring

may be short and. However, memory it is locked in the

position where printed wiring Because certain, in order

not to damage this, HM658512 is locked with the both

sides adhesive tape. As for 74HC02 and 74HC32,

nearby GND of HM658512 and +5V in place of pattern

both sides   It locks with the adhesive tape.    More

and more start of wiring. In order MA14~MA18 to

remove the signal from S1985, the 3~7   At a time .1

books which solder the wire of AWG28 in the pin the

solder the wire which is plated the edge Adjusting to

the child, you stop with the tape, apply the soldering

iron and solder. Piling up the solder   It cannot go.

Because interval of the terminal is narrow very, please

go prudently. Solder   After, pulling the wire, all right

thing and, with the terminal of the appearance it is not

short   Please verify whether. When the solder ends,

is soldered in the part which stress adding   In order

there is no straw, the wire is locked with the tape.

Furthermore taking the signal of ~SLT30   In order to

put out, 1 it wires even in 53 pins. As for .74HC32

where also the wiring of HM658512,74HC02,74HC32

keeps doing to order next 2   Because there is an

unused gate, please connect the unused input terminal

to GND.   In addition, because direction of the gate

of 74HC02 and 74HC32 is opposite, please note. Pin

distribution   After verifying the position well, please


As for the condenser of 0.1μF, the Vcc of HM658512

and inserting between GND, as [pasukon] the [ku]   

The occasion where is.

(4) the ~RFSH terminal of Z80 it pulls up by the

resistance of 10KΩ. The ~RFSH terminal of Z80 at the

time of PAUSE state becomes high impedance state,

  It increases. In order for logic not to become

uncertainty, it pulls up by resistance. Z80 The

resistance of 10KΩ is soldered between ~RFSH and

(5) assembly    In a general way when wiring ends,

please verify with the tester whether just it is wired.

Especially because the short circuit related to power

source, it is fatal, please be sure to verify. When wiring

and verifying of the baseplate end, when being

disassembly, the substance is assembled with the

procedure of opposite.   The keyboard has reached

the point where the terminal of film condition is poured

in the connector, but, the film   In order not to snap,

please insert prudently.
(6) operation verification Please turn on the power of

MSX itself. In picture “Main RAM: 512Kbytes” it is

indicated, The [re], first stage is OK. To move the

memory test program next, the test of memory   

Please do. If the result of the test ends normally, it is

OK. Reforming of memory addition   Structure is

completion. It seemed the hardship way.    When

starting, turning off power directly, please inspect


6. Request in regard to handling  This schematic

makes the free software. Copyright is not abandoned,

but, Handling is free inside the range which the kind of

writer who is shown below recognizes. It is reluctant

thing truly, but, with the baseplate which was

remodelled on the basis of this schematic in the user a

some Damage occurring, the writer does not owe

responsibility altogether. Please utilizes the

remodelling .MSX itself is a considerable risk

beforehand in regard to acknowledgment. As for the

latest remodelling because it is the meaning which

exchanges main memory, after understanding the

sufficient verification of the baseplate of .MSX itself

which if it fails, stops starting remodelling properly and

the operation of the circuit, please do remodelling.  

 When there is a thing which does not understand

concerning remodelling, communication in the board

room “MSX armament construction party” of FMSX of

NIFTY or E-mail. It is possible, if we answer. 1995

May 2nd Fujimoto 昌 interest (NIFTY-ID: MCN00585)

By Jipe

Paragon (1549)

Jipe's picture

03-06-2008, 00:54

added : required pseudo static ram HM658512 (8 ×1 512KB) before starting work

By dhau

Paragon (1570)

dhau's picture

03-06-2008, 08:00

So they use SRAM, like DamageX a while ago, so that broken refresh doesn't matter.
And that schematic in ascii is supposedly allows proper detection of full 512K on power-up.

Probably if I'll open this text on MSXDOS 2.20 with type command, I may see the unscrambled japanese with schematics...

By dhau

Paragon (1570)

dhau's picture

03-06-2008, 08:46

MA18 (pin 3) is only used for memory addressing is /X5=1 (pin 78) during reset/power-up...

By dhau

Paragon (1570)

dhau's picture

03-06-2008, 09:56

I cleaned up schematics a bit:

                        No.                No.
          Z80      +5V  11------------------32  Vcc
          Z80      GND  29------------------16  GND
          Z80       D0  14------------------13  D0
          Z80       D1  15------------------14  D1
          Z80       D2  12------------------15  D2
          Z80       D3   8------------------17  D3
          Z80       D4   7------------------18  D4
          Z80       D5   9------------------19  D5
          Z80       D6  10------------------20  D6
          Z80       D7  13------------------21  D7
          Z80       A0  30------------------12  A0
          Z80       A1  31------------------11  A1
          Z80       A2  32------------------10  A2
          Z80       A3  33------------------ 9  A3
          Z80       A4  34------------------ 8  A4
          Z80       A5  35------------------ 7  A5
          Z80       A6  36------------------ 6  A6
          Z80       A7  37------------------ 5  A7
          Z80       A8  38------------------27  A8
          Z80       A9  39------------------26  A9
          Z80      A10  40------------------23  A10
          Z80      A11   1------------------25  A11
          Z80      A12   2------------------ 4  A12
          Z80      A13   3------------------28  A13
        S1985     MA14   7------------------ 3  A14
        S1985     MA15   6------------------31  A15
        S1985     MA16   5------------------ 2  A16
        S1985     MA17   4------------------30  A17
        S1985 MA18/KBDIR 3------------------ 1  A18
          Z80      ~WR  22------------------29  ~WE
                                    +-------22  ~CE
                                    |   +---24  ~OE/~RFSH
                                    |   |
                                    |   |
                                    |   +--------------+
                                    +--------------+   |
                                              __   |   |
        S1985  ~SLT3X* 53--+----------------o|  |  |   |
                           |                 |32)o-+   |
                           |   __         +--|__|      |
                           +-o|  |        |            |
                              |02)-+  __  |            |
          Z80     ~RD  21----o|__| +-|  | |   __       |
                                     |32)-|--|  |      |
                               __  +-|__| |  |02)o-----+
          Z80   ~RFSH  28----o|  | |      +--|__|
                              |02)-+      |
          Z80   ~MREQ  19----o|__|        |
                               __         |
          Z80 ~BUSACK  23----o|  |        |

* SLT30 for HB-F1XDJ, SLT33 for HB-F1XD


HM658512	x1	512KB pseudo static ram (aka DRAM with self-refresh)
74HC02		x1	NOR gate IC
74HC32		x1	OR gate IC
1S1588		x1	Signal diode
0.1uF		x1	Ceramic capacitor (filter between Vcc and GND for memory IC)
10KOhm		x1 1/8W Resistor between Z80 ~RFSH and Vcc

Not sure how the signal diode should be connected

By dhau

Paragon (1570)

dhau's picture

03-06-2008, 10:46

As for diode, it should go between /X5 and transistor Q1 same as it is done for /X1, /X3 and /X6

By ckrtech

Resident (36)

ckrtech's picture

11-06-2008, 05:18

dhau - Have you done any of this work? Tried anything?

By rolins

Champion (418)

rolins's picture

11-06-2008, 09:36

I wonder if this applies to the Sony HB-F1XV. It's got to right? I mean the F1XV and F1XDJ are basically identical.

By dhau

Paragon (1570)

dhau's picture

11-06-2008, 16:01

dhau - Have you done any of this work? Tried anything?

Nope. Don't even plan to open any of my computers until I understand exactly how it works.

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